参数资料
型号: MSM5116165B
厂商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 1M×16 Dynamic RAM(1M×16动态RAM)
中文描述: 100万× 16动态RAM(100万× 16动态内存)
文件页数: 5/16页
文件大小: 254K
代理商: MSM5116165B
5/16
Semiconductor
MSM5116165B
DC Characteristics
Notes :
1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
I
OH
= –5.0 mA
I
OL
= 4.2 mA
0 V
V
I
6.5 V;
All other pins not
under test = 0 V
DQ disable
0 V
V
O
5.5 V
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
RAS
,
CAS
cycling,
t
RC
= Min.
Average Power
Supply Current
(Operating)
RAS
,
CAS
= V
IH
RAS
,
CAS
V
CC
–0.2 V
Power Supply
Current (Standby)
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
Average Power
Supply Current
(
RAS
-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(
CAS
before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
CAS
before
RAS
RAS
= V
IL
,
CAS
cycling,
t
HPC
= Min.
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
RAS
cycling,
Parameter
Condition
MSM5116165
B-50
MSM5116165
B-60
MSM5116165
B-70
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Symbol
Min.
2.4
0
–10
–10
Max.
V
CC
0.4
10
10
100
2
1
100
100
90
5
Min.
2.4
0
–10
–10
Max.
V
CC
0.4
10
10
90
2
1
90
90
80
5
Min.
2.4
0
–10
–10
Max.
V
CC
0.4
10
10
80
2
1
80
80
70
5
Unit
V
V
m
A
m
A
mA
mA
mA
mA
mA
mA
Note
1, 2
1, 2
1, 2
1, 3
1
1
相关PDF资料
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MSM5116400F 4,194,304-Word 】 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
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