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参数资料
| 型号： | MSP430F2101IDWR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDSO20 |
| 封装： | GREEN, PLASTIC, SOIC-20 |
| 文件页数： | 26/57页 |
| 文件大小： | 1276K |
| 代理商： | MSP430F2101IDWR |
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MSP430x21x1
MIXED SIGNAL MICROCONTROLLER
SLAS439D -- SEPTEMBER 2004 -- REVISED SEPTEMBER 2010
32
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and Erase supply voltage
2.2
3.6
V
fFTG
Flash Timing Generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
3
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
3
7
mA
tCPT
Cumulative program time (see Note 1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25°C
100
years
tWord
Word or byte program time
30
tBlock, 0
Block program time for 1st byte or word
25
tBlock, 1-63
Block program time for each additional byte or word
see Note 2
18
t
tBlock, End
Block program end-sequence wait time
seeNote2
6
tFTG
tMass Erase
Mass erase time
10593
tSeg Erase
Segment erase time
4819
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(RAMh)
RAM retention supply voltage (see Note 1)
CPU halted
1.6
V
NOTE 1: This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
JTAG interface
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
f
TCK input frequency
see Note 1
2.2 V
0
5
MHz
fTCK
TCK input frequency
see Note 1
3V
0
10
MHz
RInternal
Internal pull-down resistance on TEST
2.2 V/3 V
25
60
90
k
NOTES: 1. fTCK may be restricted to meet the timing requirements of the module selected.
JTAG fuse (see Note 1)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA =25°C
2.5
V
VFB
Voltage level on TEST for fuse-blow
TA =25°C
6
7
V
IFB
Supply current into TEST during fuse blow
TA =25°C
100
mA
tFB
Time to blow fuse
TA =25°C
1
ms
NOTES: 1. Once the fuse is blown, no further access to the JTAG/Test and emulation feature is possible and is switched to bypass mode.
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相关代理商/技术参数 |
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| MSP430F2101IPW | 功能描述:16位微控制器 - MCU 16-bit Ult-Lo-Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| MSP430F2101IPWR | 功能描述:16位微控制器 - MCU 16-bit Ult-Lo-Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| MSP430F2101IRGE | 制造商:TI 制造商全称:Texas Instruments 功能描述:MIXED SIGNAL MICROCONTROLLER |
| MSP430F2101IRGER | 功能描述:16位微控制器 - MCU 16-bit Ult-Lo-Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| MSP430F2101IRGET | 功能描述:16位微控制器 - MCU 16-bit Ult-Lo-Pwr 1kB Flash 128B RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
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