参数资料
型号: MSP430F5509IRGZR
厂商: TEXAS INSTRUMENTS INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 25 MHz, RISC MICROCONTROLLER, PQCC48
封装: PLASTIC, VQFN-48
文件页数: 59/99页
文件大小: 1134K
代理商: MSP430F5509IRGZR
PRODUCTPREVIEW
MSP430F550x
SLAS645B – JULY 2009 – REVISED JULY 2010
www.ti.com
USCI (SPI Slave Mode)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(see Note
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
1.8 V
11
PMMCOREV = 0
ns
3.0 V
8
tSTE,LEAD
STE lead time, STE low to clock
2.4 V
7
PMMCOREV = 3
ns
3.0 V
6
1.8 V
3
PMMCOREV = 0
ns
3.0 V
3
tSTE,LAG
STE lag time, Last clock to STE high
2.4 V
3
PMMCOREV = 3
ns
3.0 V
3
1.8 V
66
PMMCOREV = 0
ns
3.0 V
50
tSTE,ACC
STE access time, STE low to SOMI data out
2.4 V
36
PMMCOREV = 3
ns
3.0 V
30
1.8 V
30
PMMCOREV = 0
ns
3.0 V
23
STE disable time, STE high to SOMI high
tSTE,DIS
impedance
2.4 V
16
PMMCOREV = 3
ns
3.0 V
13
1.8 V
5
PMMCOREV = 0
ns
3.0 V
5
tSU,SI
SIMO input data setup time
2.4 V
2
PMMCOREV = 3
ns
3.0 V
2
1.8 V
5
PMMCOREV = 0
ns
3.0 V
5
tHD,SI
SIMO input data hold time
2.4 V
5
PMMCOREV = 3
ns
3.0 V
5
UCLK edge to SOMI valid,
1.8 V
76
CL = 20 pF
ns
3.0 V
60
PMMCOREV = 0
tVALID,SO
SOMI output data valid time(2)
UCLK edge to SOMI valid,
2.4 V
44
CL = 20 pF
ns
3.0 V
40
PMMCOREV = 3
1.8 V
18
CL = 20 pF
ns
PMMCOREV = 0
3.0 V
12
tHD,SO
SOMI output data hold time(3)
2.4 V
10
CL = 20 pF
ns
PMMCOREV = 3
3.0 V
8
(1)
fUCxCLK = 1/2tLO/HI with tLO/HI ≥ max(tVALID,MO(Master) + tSU,SI(USCI), tSU,MI(Master) + tVALID,SO(USCI)).
For the master's parameters tSU,MI(Master) and tVALID,MO(Master) see the SPI parameters of the attached slave.
(2)
Specifies the time to drive the next valid data to the SOMI output after the output changing UCLK clock edge. See the timing diagrams
(3)
Specifies how long data on the SOMI output is valid after the output changing UCLK clock edge. See the timing diagrams in Figure 11
62
Copyright 2009–2010, Texas Instruments Incorporated
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