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参数资料
| 型号： | MT3S06FS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 234K |
| 代理商： | MT3S06FS |
MT3S06FS
2005-07-05
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Buffer Applications
Superior performance in buffer applications
Superior noise characteristics
: NF = 1.7 dB, |S21e|
2 = 8.5 dB (f = 2 GHz)
Lead (Pb)-free.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
15
mA
Base current
IB
7
mW
Collector power dissipation
PC(Note)
85
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: 10mm2 ×0.8 mm(t),mounted on a glass-epoxy printed circuit board.
Marking
Unit: mm
JEDEC
―
JEITA
―
Toshiba
2-1E1A
Weight: 0.0006 g (typ.)
2
1
3
0 3
fSM
0.2±
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.15±
0.05
0.
35
±0
.0
5
0.
6±
0.
05
1
2
0.1±0.05
0.48
+0
.0
2
-0
.0
4
1.BASE
2.EMITTER
3.COLLECOTR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT3S06S | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S06S_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S06T | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S06T(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 5V 0.015A 3-Pin TESM T/R |
| MT3S06U | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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