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参数资料
| 型号： | MT3S110FS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MT3S110FS |
MT3S110FS
2005-06-13
1
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT3S110FS
VCO OSCILLETOR STAGE
VHF-UHF Low Noise Amplifier Application
FEATURES
Low Noise Figure :NF=1.3dB (@f=2GHz)
High Gain:|S21e|2=9dB (@f=2GHz)
Leed (Pb)-free.
Marking
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
13
V
Collector-Emitter voltage
VCEO
6
V
Emitter-Base voltage
VEBO
1
V
Collector-Current
IC
80
mA
Base-Current
IB
20
mA
Collector Power dissipation
PC(Note)
100
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Note: Device mounted on a glass-epoxy PCB(1.0 cm
2 x 1.0 mm (t))
Unit:mm
0
.15
±
0
.05
0.
3
5
±
0.
0
5
0.
6
±
0.
0
5
0.
2±0
.0
5
1.0±0.05
0.8±0.05
0.1±0.05
1
2
3
0.
1±
0.
05
0
.4
8
+
0
.02
-0
.04
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
-
JEITA
-
TOSHIBA
2-1E1A
Weight: 0.0006 g
2
1
3
4 5
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