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参数资料
| 型号： | MT3S11T |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | TESM, 2-1B1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 119K |
| 代理商： | MT3S11T |
MT3S11T
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S11T
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
Superior performance in oscillator applications.
Superior noise characteristics
: NF = 2.4 dB, |S21e|
2 = 3.5 dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector- base voltage
VCBO
13
V
Collector- emitter voltage
VCEO
6
V
Emitter- base voltage
VEBO
1
V
Collector current
IC
40
mA
Base current
IB
10
mW
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022g (typ.)
T R
1
2
3
TESM
1.Base
2.Emitter
3.Collector
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