参数资料
型号: MT6L58AE
元件分类: 小信号晶体管
英文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: SUPER THIN, EXTREME SUPER MINI, ES6, 2-2N1C, 6 PIN
文件页数: 1/3页
文件大小: 0K
代理商: MT6L58AE
MT6L58AE
2010-04-14
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AE
VHF~UHF Band Low Noise Amplifier Applications
Two devices are built in to the super-thin and extreme super mini (6
pins) package: ES6
Mounted Devices
Q1: SSM (TESM)
Q2: SSM (TESM)
Three-pins (SSM/TESM) mold
products are corresponded.
MT3S06S
(MT3S06T)
MT3S03AS
(MT3S03AT)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
2
V
Collector current
IC
15
40
mA
Base current
IB
7
10
mA
Collector power dissipation
PC
(Note 1)
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2.
Marking
Pin Assignment (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
ES6
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