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参数资料
| 型号： | MTB10N40E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 10 AMPERES |
| 中文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 273K |
| 代理商： | MTB10N40E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
—
398
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
0.1
1.0
μ
Adc
Gate–Body Leakage Current–Forward
(Vgsf = 20 Vdc, VDS = 0)
IGSSF
—
—
100
nAdc
Gate–Body Leakage Current–Reverse
(Vgsr = 20 Vdc, VDS = 0)
IGSSR
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
6.3
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.4
0.55
Ohm
—
—
5.61
—
6.6
5.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
4.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1570
2200
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
230
325
Reverse Transfer Capacitance
—
55
110
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 10
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
25
50
ns
Rise Time
(VDD = 200 Vdc, ID = 10 Adc,
VGS = 10 Vdc,
—
37
75
Turn–Off Delay Time
—
75
150
Fall Time
—
31
65
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
—
46
63
nC
(VDS = 320 Vdc, ID = 10 Adc,
—
10
—
—
23
—
—
—
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.9
—
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 10 Adc, VGS = 0 Vdc,
s)
dIS/dt = 100 A/
μ
trr
—
250
—
ns
Reverse Recovery Stored Charge
QRR
—
3000
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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