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参数资料
| 型号： | MTB1306 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES |
| 中文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 176K |
| 代理商： | MTB1306 |
1
Motorola, Inc. 1997
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N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
30
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
20
±
20
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
75
59
225
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
PD
150
1.2
2.5
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25
)
280
mJ
Thermal Resistance — Junction–to–Case
— Junction–to–Ambient
— Junction–to–Ambient (1)
R
θ
JC
R
θ
JA
R
θ
JA
TL
0.8
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 5.0 seconds
260
°
C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
Order this document
by MTB1306/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
75 AMPERES
30 VOLTS
RDS(on) = 0.0065 OHM
CASE 418B–03
D2PAK
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB1-30PAL2-01 | 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 30 POS 1.27mm Solder RA Thru-Hole |
| MTB1-30PAL79 | 制造商:ITT Interconnect Solutions 功能描述:MTB1-30PAL79 / 095308-0026 / MICRO |
| MTB1-30PAL80 | 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 30 POS 1.27mm Solder RA Thru-Hole |
| MTB1-30PH001 | 制造商:ITT Interconnect Solutions 功能描述:MTB1-30PH001 - Bulk |
| MTB1-30PH029-01 | 制造商:ITT Interconnect Solutions 功能描述:MTB1-30PH029-01 - Bulk |
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