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参数资料
| 型号： | MTB1306 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES |
| 中文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 176K |
| 代理商： | MTB1306 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
1.5
2.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
RDS(on)
—
—
5.8
7.4
6.5
8.5
m
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150
°
C)
VDS(on)
—
—
0.44
—
0.5
0.38
Vdc
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS
15
55
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
2560
3584
pF
Output Capacitance
—
1305
1827
Transfer Capacitance
—
386
772
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vd
VGS= 5 0 Vdc
VGS = 5.0 Vdc,
RG = 4.7
I
75 Ad
td(on)
tr
td(off)
tf
QT
—
17
35
ns
Rise Time
—
170
340
Turn–Off Delay Time
—
68
136
Fall Time
)
—
145
290
Gate Charge
(VDS = 24 Vdc,D
(DS
VGS = 5.0 Vdc)
—
50
70
nC
Q1
Q2
Q3
—
8.3
—
,
—
25.3
—
—
17.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.75
0.64
1.1
—
Vdc
Reverse Recovery Time
(IS = 20 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
—
84
—
ns
—
35
—
,
tb
—
53
—
Reverse Recovery Stored Charge
QRR
—
0.13
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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