- 您现在的位置：买卖IC网 > PDF目录379326 > MTB23P06 (Motorola, Inc.) TMOS POWER FET 23 AMPERES 60 VOLTS PDF资料下载
参数资料
| 型号： | MTB23P06 |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 23 AMPERES 60 VOLTS |
| 中文描述： | TMOS是功率FET 23安培60伏特 |
| 文件页数： | 2/10页 |
| 文件大小： | 280K |
| 代理商： | MTB23P06 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
—
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
100
1000
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
3.1
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 11.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 23 Adc)
(ID = 11.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.094
0.12
Ohm
—
—
2.21
—
3.3
3.0
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 11.5 Adc)
gFS
5.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1357
1900
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
600
840
Reverse Transfer Capacitance
—
200
400
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 10
)
td(on)
tr
td(off)
tf
—
18
36
ns
Rise Time
(VDD = 30 Vdc, ID = 23 Adc,
VGS = 10 Vdc,
—
140
280
Turn–Off Delay Time
—
76
152
Fall Time
—
69
138
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
75
105
nC
(VDS = 48 Vdc, ID = 23 Adc,
—
9.0
—
—
37
—
—
27
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 23 Adc, VGS = 0 Vdc)
(IS = 23 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
2.2
1.85
3.5
—
Vdc
Reverse Recovery Time
(See Figure 14)
s)
dIS/dt = 100 A/
μ
trr
ta
—
120
—
ns
(IS = 23 Adc, VGS = 0 Vdc,
—
—
—
tb
—
—
—
Reverse Recovery Stored Charge
QRR
—
600
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MTB23P06E | TMOS POWER FET 23 AMPERES 60 VOLTS |
| MTB23P06V | IC REG LDO 750MA ADJ TO263-5 |
| MTB50P03HDL | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS |
| MTB75N03HDL | TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS |
| MTB8N50E | TMOS POWER FET 8.0 AMPERES 500 VOLTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB23P06E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 60 VOLTS |
| MTB23P06ET4 | 制造商:Motorola Inc 功能描述: |
| MTB23P06V | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 23A 3-Pin(2+Tab) D2PAK Rail |
| MTB23P06VT4 | 功能描述:MOSFET P-CH 60V 23A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MTB2-3PH001 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-3PH001 - Bulk |
发布紧急采购，3分钟左右您将得到回复。