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参数资料
| 型号： | MTB33N10ET4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 188K |
| 代理商： | MTB33N10ET4 |
MTB33N10E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
1
35
79
0
30
50
70
90
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
10
0
20
40
70
90
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
012
30
42
60
66
0.02
0.03
0.06
0.07
0.09
5
11
2335
5365
0.037
0.039
0.043
0.049
0.053
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.6
1.2
1.6
2.0
20
100
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
–25
0
25
50
75
100
125
150
TJ = 25°C
VGS = 10 V
VDS ≥ 10 V
25
°C
100
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
24
6
8
10
9 V
5 V
6 V
7 V
8 V
80
60
30
10
2.5 3.0 3.5
5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
TJ = 100°C
25
°C
–55
°C
0.04
0.05
18
24
36
48
54
0.051
0.047
0.041
17
29
41
47
59
0.8
30
60
90
10
40
60
80
20
50
6
0.08
0.045
1.0
1.4
1.8
40
50
70
80
4.0 4.5 5.0
VGS = 10 V
ID = 16.5 A
25
°C
100
°C
VGS = 10 V
15 V
TJ = –55°C
TJ = 125°C
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