参数资料
型号: MTB36N06VT4
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: CASE 418B-03, D2PAK-3
文件页数: 1/10页
文件大小: 258K
代理商: MTB36N06VT4
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTB36N06V/D
MTB36N06V
Preferred Device
Power MOSFET
32 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp ≤ 50 μs)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
32
22.6
112
Adc
Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
90
0.6
3.0
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)
EAS
205
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJA
1.67
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENT
MTB36N06V
YWW
1
Gate
4
Drain
2
Drain
3
Source
32 AMPERES
60 VOLTS
RDS(on) = 40 mΩ
Device
Package
Shipping
ORDERING INFORMATION
MTB36N06V
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MTB36N06V
= Device Code
Y
= Year
WW
= Work Week
MTB36N06VT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
相关PDF资料
PDF描述
MTB36N06VT4 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
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