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参数资料
| 型号： | MTB36N06E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 36 AMPERES 60 VOLTS |
| 中文描述： | 36 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 2/10页 |
| 文件大小： | 278K |
| 代理商： | MTB36N06E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
61
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current–Forward
(Vgsf = 20 Vdc, VDS = 0)
IGSSF
—
—
100
nAdc
Gate–Body Leakage Current–Reverse
(Vgsr = 20 Vdc, VDS = 0)
IGSSR
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.8
6.5
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 18 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 36 Adc)
(ID = 18 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.034
0.04
Ohm
—
—
1.33
1.00
1.75
1.44
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 18 Adc)
gFS
8.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1300
2000
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
600
850
Reverse Transfer Capacitance
—
150
350
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 10
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
18
36
ns
Rise Time
(VDD = 30 Vdc, ID = 36 Adc,
VGS = 10 Vdc,
—
100
200
Turn–Off Delay Time
—
45
90
Fall Time
—
50
100
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
—
38
47
nC
(VDS = 48 Vdc, ID = 36 Adc,
—
10
—
—
15
—
—
14
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 36 Adc, VGS = 0 Vdc)
(IS = 36 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.5
1.25
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 36 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s)
trr
—
110
—
ns
Reverse Recovery Stored Charge
QRR
—
230
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
LD
—
3.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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