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参数资料
| 型号： | MTB36N06V |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 60 VOLTS |
| 中文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 241K |
| 代理商： | MTB36N06V |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
1
2
3
0
18
72
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
1
3
5
7
9
0
18
54
72
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
18
36
72
0.02
0.06
0.04
0.1
R
0
36
54
72
0.028
0.036
0.044
0.052
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
1.8
0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
40
50
60
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 16 A
TJ = 25
°
C
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
25
°
C
TJ = 25
°
C
VGS = 10 V
15 V
VGS = 0 V
TJ = 125
°
C
36
54
4
36
54
18
30
VDS
≥
10 V
TJ = 100
°
C
–55
°
C
4 V
2
4
6
8
0.08
0
1
1.4
1000
1
100
°
C
25
°
C
175
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