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参数资料
| 型号： | MTB36N06V |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 60 VOLTS |
| 中文描述： | 32 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 6/10页 |
| 文件大小： | 241K |
| 代理商： | MTB36N06V |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 13. Thermal Response
0.1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 14. Diode Reverse Recovery Waveform
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
ID = 32 A
1
150
Figure 15. D2PAK Power Derating Curve
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10
100
1000
1
0
175
50
25
dc
100
μ
s
1 ms
10 ms
10
μ
s
t, TIME (s)
1.00
0.10
0.01
1.0E–05
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.02
225
75
100
125
150
200
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
P
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
175
175
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