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参数资料
| 型号： | MTB50N06VT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-04, D2PAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 207K |
| 代理商： | MTB50N06VT4 |
MTB50N06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
69
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.7
3.0
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 21 Adc)
RDS(on)
0.025
0.028
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 42 Adc)
(ID = 21 Adc, TJ = 150°C)
VDS(on)
1.4
1.7
1.6
Vdc
Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc)
gFS
16
23
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1644
2320
pF
Output Capacitance
Coss
465
660
Reverse Transfer Capacitance
Crss
112
230
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
(VDD = 25 Vdc, ID = 42 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
12
20
ns
Rise Time
tr
122
250
TurnOff Delay Time
td(off)
64
110
Fall Time
tf
54
90
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 42 Adc,
VGS = 10 Vdc)
QT
47
70
nC
Q1
9
Q2
21
Q3
16
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(IS = 42 Adc, VGS = 0 Vdc)
(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.06
0.99
2.5
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 42 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
84
ns
ta
73
tb
11
Reverse Recovery Stored
Charge
QRR
0.28
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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