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参数资料
| 型号： | MTB50N06VT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-04, D2PAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 207K |
| 代理商： | MTB50N06VT4 |
MTB50N06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
100
80
60
40
20
0
0.8
0
9
7
5
3
1
VDS ≥ 10 V
TJ = 55°C
100°C
25°C
VGS = 10 V
0.04
20
0
0.034
0.01
40
60
80
100
TJ = 100°C
25°C
55°C
TJ = 25°C
0.033
0.021
0
VGS = 10 V
15 V
VGS = 10 V
ID = 21 A
2
1.5
1
0.5
0
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
1000
1
0
1020
30405060
1.6
2.4
3.2
4
100
80
60
40
20
0
246
8
0.028
0.022
0.016
0.03
0.027
0.024
20
40
60
80
100
10
100°C
25°C
175
2.5
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| MTB50SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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