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参数资料
| 型号： | MTB50P03HDLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 50A D2PAK |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 产品目录绘图： | MOSFET D2PAK |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 25A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 4900pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | MTB50P03HDLG-ND MTB50P03HDLGOS |
MTB50P03HDL, MVB50P03HDLT4G
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 30 Vdc, V GS = 0 Vdc)
(V DS = 30 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 15 Vdc, V DS = 0 Vdc)
(C pk ≥ 2.0) (Note 3)
V (BR)DSS
I DSS
I GSS
30
?
?
?
?
?
26
?
?
?
?
?
1.0
10
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance
(V GS = 5.0 Vdc, I D = 25 Adc)
Drain ? Source On ? Voltage (V GS = 5.0 Vdc)
(I D = 50 Adc)
(I D = 25 Adc, T J =125 ° C)
Forward Transconductance
(V DS = 5.0 Vdc, I D = 25 Adc)
(C pk ≥ 3.0) (Note 3)
(C pk ≥ 3.0) (Note 3)
V GS(th)
R DS(on)
V DS(on)
g FS
1.0
?
?
?
?
15
1.5
4.0
20.9
0.83
?
20
2.0
?
25
1.5
1.3
?
Vdc
mV/ ° C
m W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
3500
4900
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
1550
550
2170
770
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
22
30
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 15 Vdc, I D = 50 Adc,
V GS = 5.0 Vdc, R G = 2.3 W )
t r
t d(off)
t f
?
?
?
340
90
218
466
117
300
Gate Charge (See Figure 8)
(V DS = 24 Vdc, I D = 50 Adc,
V GS = 5.0 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
74
13.6
44.8
35
100
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
(See Figure 15)
Reverse Recovery Stored Charge
(I S = 50 Adc, V GS = 0 Vdc)
(I S = 50 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 50 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
2.39
1.84
106
58
48
0.246
3.0
?
?
?
?
?
Vdc
ns
m C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
3.5
7.5
?
?
nH
nH
C pk =
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Max limit ? Typ
3 x SIGMA
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB50P03HDLT4 | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB50SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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