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参数资料
| 型号： | MTB60N06HDT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 279K |
| 代理商： | MTB60N06HDT4 |
MTB60N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
20
40
80
120
100
60
0
1.0
2.0
3.0
4.0
5.0
0
20
40
80
120
Figure 1. OnRegion Characteristics
2.0
2.8
3.6
4.4
6.0
7.6
Figure 2. Transfer Characteristics
0
20
40
60
80
120
0.006
0.008
0.012
0.016
0.020
0.0100
0.0108
0.0116
0.0124
0.0132
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.0
1.4
1.8
010
20
40
50
60
1
10
100
1000
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage
Current versus Voltage
25
0
25
50
75
100
125
150
100
60
0.5
1.5
2.5
3.5
4.5
6.8
0.018
0.014
0.010
100
0
20
40
60
80
120
100
0.0128
0.0120
0.0112
0.0104
1.2
1.6
30
VGS = 10 V
9 V
8 V
100
°C
25
°C
TJ = 55°C
TJ = 25°C
15 V
VGS = 10 V
55
°C
VGS = 0 V
TJ = 125°C
100
°C
25
°C
5 V
6 V
TJ = 25°C
7 V
10
30
50
70
90
110
10
30
50
70
90
110
VDS ≥ 10 V
5.2
VGS = 10 V
ID = 30 A
TJ = 100°C
25
°C
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相关代理商/技术参数 |
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|---|---|
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
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