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参数资料
| 型号： | MTB60N10E7L |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 6/8页 |
| 文件大小： | 182K |
| 代理商： | MTB60N10E7L |
MTB60N10E7L
6
Motorola TMOS Power MOSFET Transistor Device Data
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10 s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 13). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
E
I D
,DRAIN
CURRENT
(AMPS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
25
75
175
600
250
0
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1
1000
10
1
1000
,SINGLE
PULSE
DRAIN–T
O–SOURCE
AS
A
V
ALANCHE
ENERGY
(mJ)
50
100
125
ID = 60 A
300
50
10 ms
1.0 ms
100
ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100
dc
10
ms
100
150
200
500
400
450
350
100
150
550
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB60N10E7LT4 | 制造商:Motorola Inc 功能描述: |
| MTB60P06H8 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
| MTB6N60 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 6.0 AMPERES 600 VOLTS |
| MTB6N60E | 制造商:ON Semiconductor 功能描述: |
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