- 您现在的位置：买卖IC网 > PDF目录96091 > MTB60N10E7LT4 (MOTOROLA INC) 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB60N10E7LT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 182K |
| 代理商： | MTB60N10E7LT4 |
MTB60N10E7L
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Drain Current and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation
with Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
5
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
130
ID, DRAIN CURRENT (AMPS)
0
–25
–50
TJ, JUNCTION TEMPERATURE (°C)
2.75
1.75
0.75
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
020
10,000
100
10
1
0.1
0
I D
,DRAIN
CURRENT
(AMPS)
R
0
24
6
10
20
30
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
50
25
10
30
50
I DSS
,LEAKAGE
(nA)
120
1.5
0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
10
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1
5
120
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
ID, DRAIN CURRENT (AMPS)
0.020
0.015
0.010
0.005
0
R
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
DS(on)
TJ = 100°C
–55
°C
25
°C
TJ = 25°C
20
50
30
60
13
9
810
7
4.5
3
3.5
20
30
110
60
70
80
0.005
0.040
0.030
0.025
40
TJ = 25°C
VGS = 10 V
4 V
TJ = 100°C
25
°C
–55
°C
VGS = 10 V
5 V
VGS = 10 V
ID = 30 A
VDS ≥ 10 V
TJ = 150°C
100
°C
25
°C
4
75
100
175
125
40
70
100
80
110
90
8 V
6 V
5 V
4.5 V
3 V
3.5 V
2
2.5
40
50
60
100
70
80
90
40
50
0
100 110 120
90
0.010
0.015
0.020
0.025
0.030
0.035
130
10
20
30
60
70
80
40
50
0
100 110 120
90
150
0.25
0.50
1.50
1.00
1.25
2.50
2.00
2.25
70
60
80
100
90
110
1000
VGS = 0 V
相关PDF资料 |
PDF描述 |
|---|---|
| MTB71040L | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB71040LT4 | 60 A, 100 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N05HD | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N05HDT4 | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB8N50ET4 | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB60P06H8 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
| MTB6N60 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 6.0 AMPERES 600 VOLTS |
| MTB6N60E | 制造商:ON Semiconductor 功能描述: |
| MTB6N60E1 | 制造商:ON Semiconductor 功能描述: |
| MTB6N60ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。