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参数资料
| 型号： | MTB75N05HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 240K |
| 代理商： | MTB75N05HD |
MTB75N05HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS (Note 5)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
0
160
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
5 V
TJ = 25°C
100
60
20
0
12
3
4
5
160
I D
,DRAIN
CURRENT
(AMPS)
120
80
40
20
0
01
2
3
5
8
0.014
0.012
0.01
0.006
0.004
0
ID, DRAIN CURRENT (AMPS)
20
TJ = 100°C
25°C
55 °C
VGS = 10 V
0.009
0.008
0.005
0
ID, DRAIN CURRENT (AMPS)
20
40
60
80
100
120
TJ = 25°C
2
1.5
1
0.5
0
50
TJ, JUNCTION TEMPERATURE (°C)
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 37.5 A
1000
100
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
015
30
40
50
25°C
100°C
VGS = 10 V
TJ = 55°C
25°C
100°C
0.008
0.002
0.007
0.006
140
160
10000
10
40
80
120
140
1.5
2.5
3.5
4.5
0.5
140
100
60
6
47
40
60
80
100
120
140
510
20
25
35
45
TJ = 125°C
7 V
6 V
5. Pulse Tests: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2%.
VDS ≥ 10 V
15 V
VGS = 10 V
VGS = 0 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB75N05HDT4 | 功能描述:MOSFET N-CH 50V 75A D2PAK-3 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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