参数资料
型号: MTB8N50ET4
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 4/6页
文件大小: 162K
代理商: MTB8N50ET4
MTB8N50E
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. High Voltage Capacitance Variation
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus
Current
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
I S
,SOURCE
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
V
C,
CAP
ACIT
ANCE
(pF)
t,TIME
(ns)
4000
3000
2000
1000
20
10
5.0
0
–5.0
–10
10,000
1,000
100
10
100
1000
8.0
6.0
4.0
2.0
0
32
24
16
8.0
0
1000
100
10
1.0
10
100
6.0
2.0
0
0.9
0.8
0.7
0.6
0.5
C,
CAP
ACIT
ANCE
(pF)
10
40
0.1
1.0
10
100
1000
0
8.0
4.0
100
10
0.1
0.01
1.0
15
25
12
10
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
GS
1.3
1.2
1.1
1.0
TJ = 25°C
VGS = 0 V
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
ms
dc
10 ms
1 ms
10
ms
TJ = 25°C
ID = 8 A
VDD = 250 V
VGS = 10 V
td(off)
tr
td(on)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
VDS = 0 V
VGS = 0 V
Ciss
Crss
Coss
TJ = 25°C
VGS VDS
400
300
200
100
0
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
TJ = 25°C
ID = 8 A
VDS
VGS
Q2
Q1
QT
Q3
tf
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