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参数资料
| 型号： | MTD15N06VT4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MTD15N06VT4 |
Semiconductor Components Industries, LLC, 2003
November, 2003 Rev. 4
1
Publication Order Number:
MTD15N06V/D
MTD15N06V
Preferred Device
Power MOSFET
15 Amps, 60 Volts
NChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
Continuous
Single Pulse (tp ≤ 50 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current Continuous @ 25
°C
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
15
8.7
45
Adc
Apk
Total Power Dissipation @ 25
°C
Derate above 25
°C
PD
55
0.36
2.1
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 15 Apk, L = 1.0 mH, RG = 25 )
EAS
113
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
RθJC
RθJA
2.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
NChannel
D
S
G
http://onsemi.com
60 V
80 m
W
RDS(on) TYP
15 A
ID MAX
V(BR)DSS
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
Style 2
MARKING DIAGRAMS
15N06V
Device Code
Y
= Year
WW
= Work Week
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
1
2
3
4
YWW
15
N06V
YWW
15
N06V
Device
Package
Shipping
ORDERING INFORMATION
MTD15N06V
DPAK
75 Units/Rail
MTD15N06V1
DPAK
Straight Lead
75 Units/Rail
MTD15N06VT4
DPAK
2500 Tape &
Reel
相关PDF资料 |
PDF描述 |
|---|---|
| MTD15N06V-1 | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N50ET4 | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N60ET4 | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N80E | 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD1N80ET4 | 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD1N40 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | 制造商:Motorola Inc 功能描述: |
| MTD1N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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