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参数资料
| 型号： | MTD20N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369C-01, DPAK-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 287K |
| 代理商： | MTD20N06HD |
MTD20N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
54
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
μAdc
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 10 Adc)
RDS(on)
0.035
0.045
Ohm
DraintoSource OnVoltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125°C)
VDS(on)
1.2
1.1
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 10 Adc)
gFS
5.0
6.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
607
840
pF
Output Capacitance
Coss
218
290
Transfer Capacitance
Crss
55
110
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
9.2
18
ns
Rise Time
tr
61.2
122
TurnOff Delay Time
td(off)
19
38
Fall Time
tf
36
72
Gate Charge
(See Figure 7)
(VDS = 48 Vdc, ID = 20 Adc,
VGS = 10 Vdc)
QT
17
24
nC
Q1
3.4
Q2
7.75
Q3
7.46
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.95
0.88
1.0
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
35.7
ns
ta
24
tb
11.7
Reverse Recovery Stored Charge
QRR
0.055
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values. Cpk = Absolute Value of Spec (SpecAVG/3.516 μA).
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20N06HD1 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDLT4 | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20N06HDT4 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLT4 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLT4 | 20 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
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