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| 型号： | MTD20N06HDLT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/12页 |
| 文件大小： | 293K |
| 代理商： | MTD20N06HDLT4 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
HDTMOS E-FET
High Density Power FET
DPAK for Surface Mount or
Insertion Mount
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to
withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited
for bridge circuits, and inductive loads. The avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched, and to offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
Available in Insertion Mount, Add –1 or 1 to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current — Continuous @ 25
°C
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
20
12
60
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C (1)
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 20 Apk, L = 1.0 mH, RG = 25 )
EAS
200
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR–4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
bt MTD20N06HDL/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
MTD20N06HDL
TMOS POWER FET
LOGIC LEVEL
20 AMPERES
60 VOLTS
RDS(on) = 0.045 OHM
Motorola Preferred Device
CASE 369A–13, Style 2
DPAK
相关PDF资料 |
PDF描述 |
|---|---|
| MTD20N06HDT4 | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD20P03HDLT4 | 19 A, 30 V, 0.099 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD20P06HDLT4 | 20 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2955ET4 | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2955VT4 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06V | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD20P03 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
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