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参数资料
| 型号： | MTD2955ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 278K |
| 代理商： | MTD2955ET4 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
1
Publication Order Number:
MTD2955E/D
MTD2955E
Preferred Device
TMOS EFETt Power Field
Effect Transistor DPAK for
Surface Mount
PChannel EnhancementMode Silicon
Gate
This advanced TMOS EFET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a draintosource diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13 inch /
2500 Unit Tape & Reel, Add T4 Suffix to Part Number
Replaces the MTD2955
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTD2955ET4
DPAK
2500/ Tape & Reel
DPAK
SUFFIX
CASE 369A
Style 2
MARKING
DIAGRAM
T2955E
= Specific Device Code
Y
= Year
WW
= Work Week
TMOS POWER FET
12 AMPERES
60 VOLTS
RDS(on) = 0.3 W
D
S
G
YWW
T2955E
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相关PDF资料 |
PDF描述 |
|---|---|
| MTD2955VT4 | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTD2N40E | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD2N50E1 | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD2N50E | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD3302 | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955VG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
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