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参数资料
| 型号： | MTD3302 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 278K |
| 代理商： | MTD3302 |
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
Publication Order Number:
MTD3302/D
MTD3302
Advance Information
Power MOSFET
18 Amps, 30 Volts
NChannel DPAK
This Power MOSFET is capable of withstanding high energy in the
avalanche and commutation modes and the draintosource diode has
a very low reverse recovery time. These devices are designed for use
in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Characterized Over a Wide Range of Power Ratings
Ultralow R
DS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Logic Level Gate Drive Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage
VDGR
30
Vdc
GatetoSource Voltage
VGS
±20
Vdc
GatetoSource Operating Voltage
VGS
±16
Vdc
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 20 mH, IL(pk) = 10 A, VDS = 30 Vdc)
EAS
1000
mJ
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
PIN ASSIGNMENT
1
Gate
3
Source
2
Drain
4
Drain
18 AMPERES
30 VOLTS
RDS(on) = 10 m
Device
Package
Shipping
ORDERING INFORMATION
MTD3302
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
http://onsemi.com
NChannel
D
S
G
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
3302
MTD3302T4
DPAK
2500 Tape & Reel
1
2
3
4
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相关代理商/技术参数 |
参数描述 |
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| MTD3302T4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:MOSFET Transistor, N-Channel, TO-252AA |
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| MTD392 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Coaxial Transceiver Interface |
| MTD392N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Coaxial Transceiver Interface |
| MTD392V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Coaxial Transceiver Interface |
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