- 您现在的位置：买卖IC网 > PDF目录98046 > MTD3302 (ON SEMICONDUCTOR) 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MTD3302 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 7/12页 |
| 文件大小： | 278K |
| 代理商： | MTD3302 |
MTD3302
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
10
20
60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
26
0
20
50
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
3
24
10
0
0.2
0.3
010
20
60
0.020
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.5
2.0
510
15
30
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 125°C
55
°C
TJ = 25°C
VGS = 0 V
ID = 5.0 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
3
3.5
68
10 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
20
25
100
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.5
1.25
1
1.5
2
30
10
40
60
0.002
0.004
0
0.5
0
0.1
30
25
°C
0.75
1.75
TJ = 25°C
6.0 V
2.5
30
25
°C
57
9
40
0.006
0.008
0.010
0.012
0.014
0.016
0.018
4.3 V
4.1 V
3.9 V
VGS = 10 V
3.5 V
3.3 V
3.1 V
40
50
3.7 V
4.5 V
4
4.5
5
5.5
50
相关PDF资料 |
PDF描述 |
|---|---|
| MTD4N20E | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20E1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20E-1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10ET4 | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10E | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD3302T4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:MOSFET Transistor, N-Channel, TO-252AA |
| MTD3610D3 | 功能描述:Photodiode 940nm 制造商:marktech optoelectronics 系列:- 包装:散装 零件状态:有效 波长:940nm 颜色 - 增强:- 频谱范围:400nm ~ 1060nm 二极管类型:- 不同 nm 时的响应度:0.45 A/W @ 660nm 响应时间:- 电压 - DC 反向（Vr）（最大值）:20V 电流 - 暗（典型值）:10nA 有效面积:- 视角:- 工作温度:-20°C ~ 85°C 安装类型:- 封装/外壳:- 标准包装:10 |
| MTD392 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Coaxial Transceiver Interface |
| MTD392N | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Coaxial Transceiver Interface |
| MTD392V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Coaxial Transceiver Interface |
发布紧急采购，3分钟左右您将得到回复。