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参数资料
| 型号： | MTD3302 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 278K |
| 代理商： | MTD3302 |
MTD3302
http://onsemi.com
2
POWER RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp
≤ 10 ms)
Mounted on heat sink
Tcase = 25°C
ID
IDM
30
90
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
case
VGS = 10 Vdc
PD
96
769
Watts
mW/
°C
Thermal Resistance
JunctiontoCase
Steady State
RθJC
1.3
°C/W
Continuous Source Current (Diode Conduction)
Steady State
IS
30
Adc
Parameter
Symbol
Value
Unit
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp
≤ 10 ms)
Mounted on 1 inch square
FR4 or G10 board
ID
IDM
18.3
11.2
60
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
5.0
40
Watts
mW/
°C
Thermal Resistance
JunctiontoAmbient
t
≤ 10 seconds
RθJA
25
°C/W
Continuous Source Current (Diode Conduction)
t
≤ 10 seconds
IS
6.4
Adc
Parameter
Symbol
Value
Unit
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp
≤ 10 ms)
Mounted on 1 inch square
FR4 or G10 board
ID
IDM
11.2
8.6
40
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
1.9
15
Watts
mW/
°C
Thermal Resistance
JunctiontoAmbient
Steady State
RθJA
67
°C/W
Continuous Source Current (Diode Conduction)
Steady State
IS
2.5
Adc
Parameter
Symbol
Value
Unit
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp
≤ 10 ms)
Mounted on minimum recommended
FR4 or G10 board
ID
IDM
8.3
5.2
30
Adc
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
VGS = 10 Vdc
PD
1.0
8.3
Watts
mW/
°C
Thermal Resistance
JunctiontoAmbient
Steady State
RθJA
120
°C/W
Continuous Source Current (Diode Conduction)
Steady State
IS
1.4
Adc
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