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参数资料
| 型号： | MTD2N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 118K |
| 代理商： | MTD2N40E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MTD2N40E/D
MTD2N40E
Preferred Device
Power MOSFET
2 Amps, 400 Volts
N–Channel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Replaces MTD1N40E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
400
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
400
Vdc
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current – Continuous @ TC = 25°C
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
2.0
1.5
6.0
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
Total Power Dissipation @ TC = 25°C,
when mounted to minimum
recommended pad size
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient, when mounted to
minimum recommended pad size
R
θJC
R
θJA
R
θJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
PIN ASSIGNMENT
1
Gate
3
Source
2
Drain
4
Drain
2 AMPERES
400 VOLTS
RDS(on) = 3.5
Device
Package
Shipping
ORDERING INFORMATION
MTD2N40E
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
http://onsemi.com
N–Channel
D
S
G
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
2N40E
MTD2N50ET4
DPAK
2500 Tape & Reel
1
2
3
4
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