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参数资料
| 型号： | MTD2N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 118K |
| 代理商： | MTD2N40E |
MTD2N40E
http://onsemi.com
5
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
QT, TOTAL CHARGE (nC)
12
8
6
4
2
0
02
46
8
V DS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
400
300
200
100
0
TJ = 25°C
ID = 2 A
QT
Q1
Q2
Q3
VGS
t,TIME
(ns)
100
10
1
10
100
RG, GATE RESISTANCE (OHMS)
TJ = 25°C
ID = 2 A
VDD = 200 V
VGS = 10 V
td(off)
td(on)
tf
tr
10
VDS
0.5
0.6
0.7
0
0.5
1
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
0.8
0.9
2
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain–to–source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) – TC)/(R
θJC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD2N40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD2N50 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
| MTD2N50E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTD2N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD3010N | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电二极管 系列:- 标准包装:1 系列:- 波长:850nm 颜色 - 增强型:- 光谱范围:400nm ~ 1100nm 二极管类型:引脚 nm 下响应率:0.62 A/W @ 850nm 响应时间:5ns 电压 - (Vr)（最大）:50V 电流 - 暗（标准）:1nA 有效面积:1mm² 视角:150° 工作温度:-40°C ~ 100°C 封装/外壳:径向，5mm 直径（T 1 3/4） 其它名称:475-2649-6 |
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