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参数资料
| 型号： | MTD2N50E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 147K |
| 代理商： | MTD2N50E |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MTD2N50E/D
MTD2N50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
NChannel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Replaces MTD2N50
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
500
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
2.0
1.5
6.0
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C, when
mounted to minimum recommended pad
size
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc,
IL = 2.0 Apk, L = 50 mH, RG = 25 )
EAS
100
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient, when mounted
to minimum recommended pad size
RθJC
RθJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
2 AMPERES
500 VOLTS
RDS(on) = 3.6
Device
Package
Shipping
ORDERING INFORMATION
MTD2N50E
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
NChannel
D
S
G
MTD2N50E1
DPAK
75 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
2N50E
MTD2N50ET4
DPAK
2500 Tape & Reel
1
2
3
4
1
Gate
3
Source
2
Drain
4
Drain
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD2N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD3010N | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电二极管 系列:- 标准包装:1 系列:- 波长:850nm 颜色 - 增强型:- 光谱范围:400nm ~ 1100nm 二极管类型:引脚 nm 下响应率:0.62 A/W @ 850nm 响应时间:5ns 电压 - (Vr)（最大）:50V 电流 - 暗（标准）:1nA 有效面积:1mm² 视角:150° 工作温度:-40°C ~ 100°C 封装/外壳:径向，5mm 直径（T 1 3/4） 其它名称:475-2649-6 |
| MTD3010N-DIG | 制造商:Marktech Optoelectronics 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 |
| MTD3010PM | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 类别:传感器，转换器 >> 光学 - 光电检测器 - 光电二极管 系列:- 标准包装:1 系列:- 波长:850nm 颜色 - 增强型:- 光谱范围:400nm ~ 1100nm 二极管类型:引脚 nm 下响应率:0.62 A/W @ 850nm 响应时间:5ns 电压 - (Vr)（最大）:50V 电流 - 暗（标准）:1nA 有效面积:1mm² 视角:150° 工作温度:-40°C ~ 100°C 封装/外壳:径向，5mm 直径（T 1 3/4） 其它名称:475-2649-6 |
| MTD3010PM_11 | 制造商:MARKTECH 制造商全称:Marktech Corporate 功能描述:Peak Sensitivity Wavelength: 900nm |
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