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参数资料
| 型号： | MTD2955ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 8/11页 |
| 文件大小： | 278K |
| 代理商： | MTD2955ET4 |
MTD2955E
http://onsemi.com
6
DRAINTOSOURCE DIODE CHARACTERISTICS
0.5
1.1
1.9
2.2
0
4
6
12
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
I S
,SOURCE
CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
1
t,TIME
(ns)
VDD = 30 V
ID = 12 A
VGS = 10 V
TJ = 25°C
VGS = 0 V
TJ = 25°C
Figure 10. Diode Forward Voltage versus Current
70
V GS
,GA
TET
OSOURCE
VOL
TAGE
(VOL
TS)
60
50
40
30
20
10
0
12
8
4
0
QG, TOTAL GATE CHARGE (nC)
VDS
,DRAINT
OSOURCE
VOL
TAGE
(VOL
TS)
14
10
6
2
4
8
14
18
ID = 12 A
TJ = 25°C
0
26
12
10
16
QT
Q2
VGS
Q3
VDS
tr
td(on)
tf
td(off)
0.9
0.7
10
8
2
1.5
1.7
1.3
2.1
Q1
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
ResistanceGeneral Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(RqJC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12).
Maximum energy at currents below rated continuous ID can
safely be assumed to equal the values indicated.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955VG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
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