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参数资料
| 型号： | MTD2955ET4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369A-13, DPAK-3 |
| 文件页数： | 9/11页 |
| 文件大小： | 278K |
| 代理商： | MTD2955ET4 |
MTD2955E
http://onsemi.com
7
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1.0
10
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
0.01
0
25
50
75
100
125
10
120
80
40
ID = 12 A
160
150
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
10 ms
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
200
0.1
10
1.0
t, TIME (SECONDS)
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
dc
D = 0.5
100
240
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD2955V1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail |
| MTD2955V-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955V-1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2955VG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
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