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| 型号： | MTD5P06V-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 150K |
| 代理商： | MTD5P06V-1 |
MTD5P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
0
1
23
45
0
7
2
4
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
7
8
23
4
8
0
1
2
3
6
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1
2
34
56
0.2
0.25
0.3
0.35
0.6
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
1
2
345
7
0.2
8
0.25
0.3
0.4
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
1.8
0.2
0.4
0.6
010
20
30
40
1
50
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
15 V
25
0
25
50
75
100
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100°C
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10V
VGS = 10 V
ID = 2.5 A
6
8
6
7 V
6 V
5 V
4 V
8 V
9 V
4
5
56
7
0.4
0.45
7
0.35
9
6
0.8
1
1.2
1.4
1.6
125
60
89
9
10
89
10
0.5
0.55
10
175
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD5P06VT4 | 功能描述:MOSFET 60V 5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD5P06VT4G | 功能描述:MOSFET PFET DPAK 60V 5A 450mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD5P06VT4G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MTD5P06VT4GV | 功能描述:MOSFET Single P-Ch 60V 5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6000PT | 制造商:MARKTECH 制造商全称:Marktech Corporate 功能描述:Photo Transistor |
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