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参数资料
| 型号： | MTD6N151 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 141K |
| 代理商： | MTD6N151 |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 3
1
Publication Order Number:
MTD6N15/D
MTD6N15
Power Field Effect
Transistor DPAK
for Surface Mount
NChannel EnhancementMode Silicon
Gate
This TMOS Power FET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.3 Ω Max
Rugged — SOA is Power Dissipation Limited
SourcetoDrain Diode Characterized for Use With
Inductive Loads
Low Drive Requirement — VGS(th) = 4.0 V Max
Surface Mount Package on 16 mm Tape
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
150
Vdc
DrainGate Voltage (RGS = 1.0 MΩ)
VDGR
150
Vdc
GateSource Voltage — Continuous
GateSource Voltage — NonRepetitive
(tp ≤ 50 μs)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Pulsed
ID
IDM
6.0
20
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
Watts
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C (Note 1)
PD
1.25
0.01
Watts
W/°C
Total Power Dissipation @ TA = 25°C (1)
Derate above 25°C (Note 2)
PD
1.75
0.014
Watts
W/°C
Operating and Storage Junction Temper-
ature Range
TJ, Tstg
65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
RθJC
RθJA
6.25
100
71.4
°C/W
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MTD6N15
DPAK
75 Units/Rail
MARKING DIAGRAM
& PIN ASSIGNMENTS
6N15
= Device Code
Y
= Year
WW
= Work Week
CASE 369C
DPAK
(Surface Mount)
STYLE 2
D
S
G
YWW
T
6N15
MTD6N151
DPAK
Straight Lead
75 Units/Rail
MTD6N15T4
DPAK
2500 Tape & Reel
4 Drain
3
Source
1
Gate
2
Drain
NCHANNEL
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1 2
3
4
4 Drain
1
Gate
2
Drain
3
Source
4
1
2
3
YWW
T
6N15
150 V
0.3 W
RDS(on) MAX
6.0 A
ID MAX
V(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相关PDF资料 |
PDF描述 |
|---|---|
| MTD6N15T4 | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20E1 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20E-T4 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20ET4 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20ET5G | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD6N15-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N20 | 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
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