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参数资料
| 型号： | MTD6N151 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 369D-01, DPAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 141K |
| 代理商： | MTD6N151 |
MTD6N15
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
2
1.6
1.2
0.8
0.4
0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
TJ = 25°C
24
20
16
12
8
4
0
60
50
40
30
20
10
0
10 V
9 V
8 V
7 V
6 V
5 V
VDS = VGS
ID = 1 mA
50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. GateThreshold Voltage Variation
With Temperature
V
GS(th)
,GA
TE
THRESHOLD
VOL
TAGE
(VOL
TS)
3.6
3.2
2.8
2.4
2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
VDS = 10 V
TJ = 25°C
55
°C
100
°C
14
12
10
8
6
4
2
0
468
10
2
1.6
1.2
0.8
0.4
0
50
0
50
100
150
200
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Breakdown Voltage Variation
With Temperature
V
(BR)DSS
,DRAINT
OSOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
VGS = 0 V
ID = 0.25 mA
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 6. OnResistance versus Drain Current
VGS = 10 V
0.30
0.25
0.20
0.15
0.10
0.05
0
20
16
12
8
4
0
TJ = 100°C
25
°C
55
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. OnResistance Variation
With Temperature
VGS = 10 V
ID = 3 A
50
0
50
100
150
200
相关PDF资料 |
PDF描述 |
|---|---|
| MTD6N15T4 | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20E1 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20E-T4 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20ET4 | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD6N20ET5G | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTD6N15-1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N20 | 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
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