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参数资料
| 型号： | MTD6N20E-T4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 84K |
| 代理商： | MTD6N20E-T4 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
MTD6N20E/D
MTD6N20E
Preferred Device
Power MOSFET
6 Amps, 200 Volts
NChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PbFree Package is Available*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
200
Vdc
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
200
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tp ≤ 10 ms)
ID
IDM
6.0
3.8
18
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
50
0.4
1.75
W
W/
°C
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 3.0 mH, RG = 25 W)
EAS
54
mJ
Thermal Resistance JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RqJA
2.50
100
71.4
°C/W
Maximum Temperature for Soldering
Purposes, 1/8
″ from case for 10 secs
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6 AMPERES, 200 VOLTS
RDS(on) = 460 mW
NChannel
D
S
G
Preferred devices are recommended choices for future use
and best overall value.
1
Gate
3
Source
2
Drain
4 Drain
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
6N20E Device Code
Y
= Year
WW
= Work Week
G
= PbFree Package
YWW
6
N20EG
1 2
3
4
YWW
6
N20E
1
Gate
3
Source
2
Drain
4 Drain
DPAK
CASE 369D
STYLE 2
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
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| MTD6N20ET4G | 功能描述:MOSFET NFET DPAK 200V 6A 700mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTD6N20ET5G | 功能描述:MOSFET NFET DPAK 200V 6A 700MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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