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参数资料
| 型号： | MTD6N20E-T4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 84K |
| 代理商： | MTD6N20E-T4 |
MTD6N20E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
TJ = 100°C
VGS = 0 V
VGS = 10 V
ID = 3 A
9 V
8 V
7 V
6 V
5 V
100°C
VGS = 10 V
25°C
55 °C
TJ = 25°C
VGS = 10 V
15 V
TJ = 125°C
12
10
8
6
4
2
0
12
10
8
6
4
2
0
1.2
1.0
0.8
0.6
0.2
0
0.70
2.5
2.0
1.5
1.0
0.5
0
100
1
01
23
4
5
6
7
8
9
2
3
4
5
6
7
8
9
0
2
4
6
8
10
12
0
2
4
6
8
10
12
50
25
0
25
50
75
100
125
150
0
50
100
150
200
0.4
0.65
0.60
0.55
0.50
0.45
0.40
10
25°C
100°C
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