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参数资料
| 型号： | MTE125N20E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM |
| 中文描述： | 125 A, 200 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/8页 |
| 文件大小： | 228K |
| 代理商： | MTE125N20E |
5
Motorola TMOS Power MOSFET Transistor Device Data
Qg, TOTAL GATE CHARGE (nC)
360
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
10
t
VDD = 250 V
ID = 125 A
VGS = 10 V
TJ = 25
°
C
tr
tf
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
0
10
8
4
0
12
540
ID = 62.5 A
TJ = 25
°
C
60
120
180
100
V
6
2
420
QT
Q1
Q2
Q3
VGS
VDS
120
100
80
60
40
20
0
240
300
480
td(off)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
VGS = 0 V
TJ = 25
°
C
125
100
75
50
25
0
1.2
1.1
1
0.7
0.6
0.5
0.4
0.8
0.9
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