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参数资料
| 型号： | MTE125N20E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM |
| 中文描述： | 125 A, 200 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/8页 |
| 文件大小： | 228K |
| 代理商： | MTE125N20E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 13. Thermal Response
1000
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
100
t, TIME (s)
Figure 14. Diode Reverse Recovery Waveform
r
R
1
0.001
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
1 ms
10 ms
dc
10
0.1
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
100
μ
s
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
ID = 125 A
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
E
A
0.01
0.01
100
CHIP
JUNCTION
AMBIENT
0.0 F
0.0994 F
0.5750 F
0.0174
0.1409
0.1217
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