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参数资料
| 型号： | MTE53N50E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM |
| 中文描述： | 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 167K |
| 代理商： | MTE53N50E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
560
550
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
200
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
—
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 26.5 Adc)
Drain–Source On–Voltage (VGS = Vdc)
(ID = 53 Adc)
(ID = 26.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
63
80
mOhm
—
—
—
—
4.8
4.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 26.5 Adc)
gFS
25
45
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc V
f = 1.0 MHz)
0 Vdc
Ciss
Coss
Crss
—
14400
—
pF
Output Capacitance
—
1560
—
Reverse Transfer Capacitance
—
240
—
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 250 Vdc, ID = 53 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 4.7
td(on)
tr
td(off)
tf
—
67
—
ns
Rise Time
—
322
—
Turn–Off Delay Time
—
362
—
Fall Time
)
—
310
—
Gate Charge
(VDS = 400 Vdc,D
(DS
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
474
700
nC
—
86
—
,
—
206
—
—
148
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 53 Adc, VGS = 0 Vdc)
(IS = 53 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.95
0.90
1.3
—
Vdc
Reverse Recovery Time
(IS = 53 Ad
(S
dIS/dt = 100 A/
μ
s)
V
0 Vd
trr
ta
—
720
—
ns
—
460
—
GS
,
tb
—
260
—
Reverse Recovery Stored Charge
QRR
—
15
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
5.0
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to center of die)
LS
—
5.0
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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