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参数资料
| 型号： | MTE53N50E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM |
| 中文描述： | 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 5/8页 |
| 文件大小： | 167K |
| 代理商： | MTE53N50E |
5
Motorola TMOS Power MOSFET Transistor Device Data
Qg, TOTAL GATE CHARGE (nC)
400
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
10000
10
t
VDD = 250 V
ID = 53 A
VGS = 10 V
TJ = 25
°
C
tr
tf
td(on)
td(off)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
0
10
8
4
0
12
500
ID = 53 A
TJ = 25
°
C
100
200
300
100
V
6
2
QT
Q1
Q2
Q3
VGS
VDS
420
350
280
210
140
70
0
1000
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
I
VGS = 0 V
TJ = 25
°
C
60
50
40
30
20
10
0
1.1
1
0.9
0.8
0.7
0.6
0.5
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