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| 型号： | MTP23P06V |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 23A TO-220AB |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 50 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 23A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 11.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1620pF @ 25V |
| 功率 - 最大： | 90W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP23P06VOS |
MTP23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
P?Channel TO?220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
http://onsemi.com
23 AMPERES, 60 VOLTS
R DS(on) = 120 m W
P?Channel
Features
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
? Pb?Free Package is Available*
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
D
S
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Drain?to?Gate Voltage (R GS = 1.0 M W )
V DSS
V DGR
60
60
Vdc
Vdc
MARKING DIAGRAM
AND PIN ASSIGNMENT
Gate?to?Source Voltage
? Continuous
? Non?repetitive (t p ≤ 10 ms)
Drain Current ? Continuous @ 25 ° C
V GS
V GSM
I D
± 15
± 25
23
Vdc
Vpk
Adc
4
4
Drain
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation @ 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 23 Apk, L = 3.0 mH, R G = 25 W )
I D
I DM
P D
T J , T stg
E AS
15
81
90
0.60
?55 to 175
794
Apk
W
W/ ° C
° C
mJ
1
2
3
TO?220AB
CASE 221A
STYLE 5
1
Gate
MTP
23P06VG
AYWW
2
Drain
3
Source
Thermal Resistance ? Junction?to?Case
Thermal Resistance ? Junction?to?Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10 seconds
R q JC
R q JA
T L
1.67
62.5
260
° C/W
° C
MTP23P06V
A
Y
WW
= Device Code
= Location Code
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
G
= Pb?Free Package
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MTP23P06V
MTP23P06VG
Package
TO?220AB
TO?220AB
(Pb?Free)
Shipping
50 Units/Rail
50 Units/Rail
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 4
1
Publication Order Number:
MTP23P06V/D
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