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参数资料
| 型号： | MTP2955VG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, CASE 221A-09, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 205K |
| 代理商： | MTP2955VG |
MTP2955V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
4
5
0
15
25
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
24
6
8
10
0
9
18
24
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
03
6
15
24
0
0.10
0.20
0.30
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
6
21
24
0.050
0.075
0.200
0.250
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.2
1.6
020
50
60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 6 A
9 V
8 V
6 V
5 V
7 V
5
10
20
35
79
3
12
21
VGS = 10 V
TJ = 100°C
25°C
55°C
12
21
3
12
15
10
30
40
0.05
0.15
0.25
0.100
0.225
0.125
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
67
8
9
10
15
6
18
9
0.35
0.40
0.175
918
0.150
0.4
0.2
0
1.8
2.0
100°C
相关PDF资料 |
PDF描述 |
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| MTP2955VS62Z | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
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| MTP2H-E10-C39 | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP2H-E6-C | 功能描述:电缆束带 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
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