- 您现在的位置：买卖IC网 > PDF目录96096 > MTP2N40E (ON SEMICONDUCTOR) 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | MTP2N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/8页 |
| 文件大小： | 217K |
| 代理商： | MTP2N40E |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
TMOS E-FET.
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
400
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
400
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
2.0
1.5
6.0
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
40
0.32
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25 )
EAS
45
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
3.13
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTP2N40E/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MTP2N40E
TMOS POWER FET
2.0 AMPERES
400 VOLTS
RDS(on) = 3.5 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
Motorola, Inc. 1995
相关PDF资料 |
PDF描述 |
|---|---|
| MTP2N40 | 2 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N35 | 2 A, 350 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N45 | 2 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N50 | 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3055A | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP2N45 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50E | 制造商:Motorola Inc 功能描述: |
| MTP2N60 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
发布紧急采购，3分钟左右您将得到回复。