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参数资料
| 型号： | MTP2N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 3/8页 |
| 文件大小： | 217K |
| 代理商： | MTP2N40E |
MTP2N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VGS = 10 V
4
3.2
2.4
1.6
0.8
0
20
16
12
8
4
0
8 V
7 V
6 V
5 V
4
3
2
1
0
2
3
4
5
6
7
8
VDS ≥ 10 V
TJ = – 55°C
25
°C
100
°C
VGS = 10 V
TJ = 100°C
25
°C
– 55
°C
8
6
4
2
0
4
3
2
1
0
TJ = 25°C
VGS = 10 V
15 V
5
4.5
4
3.5
3
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS = 10 V
ID = 1 A
2.5
2
1.5
1
0.5
0
– 50
– 25
0
25
50
75
100
125
150
VGS = 0 V
1000
100
10
0
100
200
300
400
TJ = 25°C
TJ = 125°C
相关PDF资料 |
PDF描述 |
|---|---|
| MTP2N40 | 2 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N35 | 2 A, 350 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N45 | 2 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N50 | 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3055A | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP2N45 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50E | 制造商:Motorola Inc 功能描述: |
| MTP2N60 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
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