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参数资料
| 型号： | MTP2N40E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 2/8页 |
| 文件大小： | 217K |
| 代理商： | MTP2N40E |
MTP2N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
451
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
—
3.1
3.5
Ohms
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125°C)
VDS(on)
—
7.3
—
8.4
7.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
gFS
0.5
1.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
229
320
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
34
40
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
7.3
10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
td(on)
—
8.0
16
ns
Rise Time
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
tr
—
8.4
14
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
12
26
Fall Time
G = 9.1 )
tf
—
11
20
Gate Charge
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
—
8.6
12
nC
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q1
—
2.6
—
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q2
—
3.2
—
Q3
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.88
0.76
1.2
—
Vdc
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
156
—
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
99
—
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
57
—
Reverse Recovery Stored Charge
QRR
—
0.89
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| MTP2N40 | 2 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N35 | 2 A, 350 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N45 | 2 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP2N50 | 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| MTP3055A | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP2N45 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 450 V/500 V |
| MTP2N50E | 制造商:Motorola Inc 功能描述: |
| MTP2N60 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
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